单层MXene纳米片Ti2N电磁特性的过渡金属(Sc、V、Zr)掺杂效应

二维材料MXene纳米片由于具有较大的比表面积和较高的电子迁移率而受到广泛的关注。本文采用基于密度泛函理论的第一性原理计算,对单层MXene纳米片Ti₂N电磁特性的过渡金属(Sc、V、Zr)掺杂效应进行了系统研究。结果表明,所有过渡金属掺杂体系结合能均为负值,结构均稳定;其中Ti₂N-Sc体系的形成能为-2.242 eV,结构更易形成,且保持稳定;掺杂后Ti₂N-Sc、Ti₂N-Zr体系磁矩增大;此外,Ti₂N-Sc体系中保留了较高的自旋极化率,达到84.9%,可预测该体系在自旋电子学中具有潜在的应用价值。     

Characterization of the chemical constituents in Hongjingtian injection by liquid chromatography quadrupole time‐of‐flight mass spectrometry

Hongjingtian injection is made from Rhodiola wallichiana and used in the treatment of stable angina pectoris associated with coronary heart disease. In this study, the chemical constituents in Hongjingtian injection were comprehensively studied using liquid chromatography quadrupole time‐of‐flight mass spectrometry. A total of 49 compounds were identified or assumed, including 10 organic acids, nine phenylethanoids, 10 phenylpropanoids, two flavonoid glycosides, seven monoterpene glycosides, seven octylglycosides and four other types of compounds. The structures of seven compounds were confirmed by comparing their retention times, MS and UV spectra with the corresponding authentic standards. Amongst the 49 compounds, 35 were firstly found in R. wallichiana, while they have been reported in other species of the genus Rhodiola, including Rhodiola crenulata, Rhodiola sacra, Rhodiola rosea and Rhodiola kirilowii. The possible fragmentation pathways in the mass spectrometry of the major types of compounds are proposed and summarized. Our study demonstrates a rapid method for characterizing the chemical constituents present in the Hongjingtian injection, which could also be applied to the identification of chemical constituents in other TCM formulae containing R. wallichiana.     

Minimal kernels of Dirac operators along maps

Let M be a closed spin manifold and let N be a closed manifold. For maps and Riemannian metrics g on M and h on N, we consider the Dirac operator of the twisted Dirac bundle . To this Dirac operator one can associate an index in . If M is 2‐dimensional, one gets a lower bound for the dimension of the kernel of out of this index. We investigate the question whether this lower bound is obtained for generic tupels .     

Li原子掺杂C28单分子器件的热自旋输运性质

利用第一性原理对Li原子掺杂C₂₈的分子器件的热自旋输运性质进行了计算。在不同的温度场下,上下自旋分别为Li原子掺杂C₂₈的分子器件中的空穴和电子提供了输运通道,在MJ₁和MJ₃分子器件中,热自旋电流随着温度增加而增大,但在MJ₂分子器件中,热自旋电流先增大再减小。三种分子器件都出现了自旋塞贝克效应,MJ₂还出现了负微分电阻现象,利用费米-狄拉克分布和自旋输运谱对其物理机理进行了解释。根据Li掺杂C₂₈的单分子器件的热自旋输运性质,可设计新的自旋纳米器件。     

Hyperparameter on-line learning of stochastic resonance based threshold networks

Aiming at training the feed-forward threshold neural network consisting of nondifferentiable activation functions, the approach of noise injection forms a stochastic resonance based threshold network that can be optimized by various gradient-based optimizers. The introduction of injected noise extends the noise level into the parameter space of the designed threshold network, but leads to a highly non-convex optimization landscape of the loss function. Thus, the hyperparameter on-line learning procedure with respective to network weights and noise levels becomes of challenge. It is shown that the Adam optimizer, as an adaptive variant of stochastic gradient descent, manifests its superior learning ability in training the stochastic resonance based threshold network effectively. Experimental results demonstrate the significant improvement of performance of the designed threshold network trained by the Adam optimizer for function approximation and image classification.     

钙钛矿结构RFeO3晶体的磁化跃迁效应研究进展

钙钛矿稀土正铁氧体RFeO₃具有丰富的磁性,这主要源于4f电子层的稀土离子和3d电子层的铁离子之间复杂的相互作用。磁化跃迁作为RFeO₃体系中的重要现象,是指体系中的稀土离子磁矩和铁离子磁矩在特定的磁场和温度下发生180°旋转,宏观表现为磁热曲线中磁化强度发生断崖式变化。本文综述了不同化合物RFeO₃的两种磁化跃迁现象,第一类磁化跃迁通常具有补偿点,F_R与F_Fe的排列耦合方向不变,第二类磁化跃迁则相反,且两类磁化跃迁出现的温区受外加磁场的调控。     

Application of persulfate with hydrodynamic cavitation and ferrous in the decomposition of pentachlorophenol

Hydrodynamic cavitation (HC) and Fe(II) are advanced oxidation processes, in which pentachlorophenol (PCP) is treated by the redox method of activating persulfate (PS). The kinetics and mechanism of the HC and Fe(II) activation of PS were examined in aqueous solution using an electron spin resonance (ESR) spin trapping technique and radical trapping with pure compounds. The optimum ratio of Fe(II)/PS was 1:2, and the hydroxyl radical (HO) and sulfate radical (SO₄⁻) generation rate were 5.56 mM h⁻¹ and 8.62 μM h⁻¹, respectively. The generation rate and R_ct of HO and SO₄⁻ at pH 3 and 50 °C in the Fe(II)/PS/HC system are 7584.6 μM h⁻¹, 0.013 and 24.02 μM h⁻¹, 3.95, respectively. The number of radicals was reduced as the pH increased, and it increased with increasing temperature. The PCP reaction rate constants was 4.39 × 10⁻² min⁻¹ at pH 3 and 50 °C. The activation energy was 10.68 kJ mol⁻¹. In addition, the mechanism of PCP treatment in the Fe(II)/PS/HC system was a redox reaction, and the HO⁻/SO₄⁻ contribution was 81.1 and 18.9%, respectively. In this study, we first examined PCP oxidation through HO and SO₄⁻ quantification using only the Fe(II)/PS/HC process. Furthermore, the results provide the foundation for activation of PS by HC and Fe(II), but also provide a data basis for similar organic treatments other than PCP.     

Effects of silica nanoparticle addition on polymer semiconductor wettability and carrier mobility in solution‐processable organic transistors on hydrophobic substrates

The effects of the addition of silica nanoparticles (SNPs) on wettability of regioregular poly(3‐hexylthiophene) (P3HT) organic semiconductor solutions on hydrophobic substrates and the carrier mobility in organic field‐effect transistors (OFETs) made of these films are investigated. The dewetting of films made from P3HT solutions on hydrophobic substrates modified with octadecyltrichlorosilane (ODTS) is markedly suppressed after the addition of SNPs with phenyl surfactants. This enables us to fabricate continuous P3HT/SNPs films with high crystallinity by the conventional spin‐coating technique, leading to higher mobility compared with P3HT FETs fabricated on non‐modified substrates. Moreover, the addition of SNPs with larger diameters compensates for the degradation of mobility associated with the increase in the concentration of SNPs. Solution‐processed P3HT/SNPs FETs on ODTS‐modified substrates exhibit a field‐effect mobility of 1.3 × 10^?2 cm² V^?1 s^?1, which is almost comparable to that of P3HT FETs without SNPs (2.1 × 10^?2 cm² V^?1 s^?1). © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 509–516     

Modeling the Effect of Injection Molding Process Parameters on Warpage Using Neural Network Theory

A back propagation artificial neural network (BPANN) prediction model for warpage of injection-molded polypropylene was developed based on an orthogonal design method. The BPANN model was trained by the input and output data obtained from the moldflow software platform simulations. It is proved that the BPANN model can predict the warpage with reasonable accuracy. Utilizing the BPANN model, the effects of the process parameters, packing pressure (Pp), melt temperature (T_me), mold temperature (T_mo), packing time (t_p), cooling time (t_c), and fill pressure (p_f), on the warpage were investigated. The most important process parameter affecting the warpage was Pp, and the second most important was T_me. The rest of the process parameters, T_mo, t_p, t_c, and p_f, were found to be relatively less influential. Warpage increased with elevating T_mo. In contrast, an increase in Pp and T_me caused the warpage to decrease.